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First principles study of metal contacts to monolayer black phosphorous.

Authors :
Chanana, Anuja
Mahapatra, Santanu
Source :
Journal of Applied Physics. 2014, Vol. 116 Issue 20, p204302-1-204302-9. 9p. 4 Diagrams, 2 Charts, 9 Graphs.
Publication Year :
2014

Abstract

Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal dichalcogenides for future channel material in a metal-oxide-semiconductor transistor due to its lower carrier effective mass. Investigation of the electronic property of source/drain contact involving metal and two-dimensional material is essential as it impacts the transistor performance. In this paper, we perform a systematic and rigorous study to evaluate the Ohmic nature of the side-contact formed by the monolayer BP (mBP) and metals (gold, titanium, and palladium), which are commonly used in experiments. Employing the Density Functional Theory, we analyse the potential barrier, charge transfer and atomic orbital overlap at the metal-mBP interface in an optimized structure to understand how efficiently carriers could be injected from metal contact to the mBP channel. Our analysis shows that gold forms a Schottky contact with a higher tunnel barrier at the interface in comparison to the titanium and palladium. mBP contact with palladium is found to be purely Ohmic, where as titanium contact demonstrates an intermediate behaviour. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
116
Issue :
20
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
99686579
Full Text :
https://doi.org/10.1063/1.4901998