Cite
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics.
MLA
Wu, Tian-Li, et al. “Analysis of Slow De-Trapping Phenomena after a Positive Gate Bias on AlGaN/GaN MIS-HEMTs with in-Situ Si3N4/Al2O3 Bilayer Gate Dielectrics.” Solid-State Electronics, vol. 103, Jan. 2015, pp. 127–30. EBSCOhost, https://doi.org/10.1016/j.sse.2014.08.006.
APA
Wu, T.-L., Marcon, D., Ronchi, N., Bakeroot, B., You, S., Stoffels, S., Van Hove, M., Bisi, D., Meneghini, M., Groeseneken, G., & Decoutere, S. (2015). Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. Solid-State Electronics, 103, 127–130. https://doi.org/10.1016/j.sse.2014.08.006
Chicago
Wu, Tian-Li, Denis Marcon, Nicolo Ronchi, Benoit Bakeroot, Shuzhen You, Steve Stoffels, Marleen Van Hove, et al. 2015. “Analysis of Slow De-Trapping Phenomena after a Positive Gate Bias on AlGaN/GaN MIS-HEMTs with in-Situ Si3N4/Al2O3 Bilayer Gate Dielectrics.” Solid-State Electronics 103 (January): 127–30. doi:10.1016/j.sse.2014.08.006.