Simulation of semiconductor devices with a local numerical approach.

A numerical solution of the Drift-Diffusion Model for simulation of semiconductor devices based on the local meshless numerical method is presented. Numerical difficulties inherited from convection-dominated processes and high gradients near junctions typically results in oscillations within the solution. The difficulties can be alleviated by artificial dissipation schemes or by other stabilization approaches that often require a complex computation to improve the solution convergence. We applied a simple numerical approach with a local coupling and without special treatments of nonlinearities. The proposed approach is straightforward to implement and is suitable for parallel execution. We demonstrate the efficiency of the proposed methodology on a simulation of PN junction. The results are compared against previously published data with a good agreement achieved. The applicability of the proposed methodology is confirmed with the simulation of extended tests with more complicated geometries and more intense dynamics. The computational efficiency is demonstrated through the measurement of execution time and speedup on shared memory computer architecture. [ABSTRACT FROM AUTHOR]