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Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs.
- Source :
-
Electronics Letters (Wiley-Blackwell) . 12/4/2014, Vol. 50 Issue 25, p1980-1982. 2p. 1 Black and White Photograph, 2 Graphs. - Publication Year :
- 2014
-
Abstract
- A self-terminating gate recess wet etching technique with thermal oxidation of the AlGaN/GaN layer followed by etching in potassium hydroxide (KOH) solution was recently proposed by the present authors for normally-off AlGaN/GaN metal-oxide semiconductor field effect transistors (MOSFETs). In this present reported work, the oxidation process inside the AlGaN/GaN heterostructure involved in this technique was analysed using several material characterisation methods. The measurement results show that the concentration and depth of the O element distribution increase with increased thermal oxidation temperature. It is worth noting that after 650°C oxidation almost no O element could be found in the GaN layer and the O element mainly locates in the AlGaN layer with an obvious correlation between the distribution of Al and O elements, where the Al(Ga)-oxide was detected by X-ray photoelectron spectroscopy, which could be etched by 70°C KOH. Thus, self-terminating wet etching on the AlGaN/GaN material is achieved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 50
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 99823065
- Full Text :
- https://doi.org/10.1049/el.2014.2790