Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation.

In this paper Gate Material Engineered (GME) Gate-Stack (GS) silicon nanowire Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack Schottky-Barrier Source/Drain Gate All Around (SM-GS-SB-S/D GAA) structures are proposed for low- power wireless applications. The Analog/RF performance for wireless applications of these devices are demonstrated. The effect of Schottky-Barrier (Metal) S/D is studied for Single Metal (SM)–SB-GAA, (Dual Metal) DM-SB-GAA, SM-GS-SB-GAA and GME-GS-SB-GAA MOSFETs, and it is found that GME-GS-SB-GAA MOSFET with metal drain source shows much improved performance in terms of transconductance ( g m ), output conductance ( g d ), Early Voltage ( V EA ), Maximum Transducer Power Gain, cut-off frequency ( f T ), and I on / I off ratio. Further, harmonic distortion for wireless applications is also studied using ATLAS-3D device simulator. Due to low parasitic S/D resistance the metal Source/Drain DM-GS-SB-S/D-GAA MOSFET demonstrates remarkable I on of~31.8 μA/μm and saturation transconductance g m of~68.2 μS with improved third order derivative of transconductance g m3 . [ABSTRACT FROM AUTHOR]