Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen.

The distribution of the total transition strength, i.e. the right hand side of the integral form of Thomas–Reiche–Kuhn sum rule, into individual absorption processes is described for crystalline silicon containing interstitial oxygen. Utilization of the sum rule allows the construction of a dispersion model covering all elementary excitations from phonon absorption to core electron excitations. The dependence of transition strength of individual electronic and phonon contributions on temperature and oxygen content is described. [ABSTRACT FROM AUTHOR]