Quantum-confined photoluminescence from size-controlled boron doped nanocrystalline-Si:H/a-SiCx:H superlattice.

Boron doped nanocrystalline-Si:H/a-SiC x :H (nc-Si:H/a-SiC x :H) quantum dot superlattice has been prepared by plasma enhanced chemical vapor deposition at a low temperature of 150 °C. This method for fabricating superlattice allows controlling both the size and density of Si quantum dots in potential well and the characteristics of potential barrier without subsequent annealing treatment. Cross-section high resolution transmission electron microscopy investigations confirm the periodic multi-layer structure of silicon quantum dots (~ 2 nm diameter) separated by a-SiC x :H matrix (2–3 nm thickness) with sharp interface. With strong blue photoluminescence and high perpendicular conductivity, boron doped nc-Si:H/a-SiC x :H quantum dot superlattice shows great advantages in obtaining applicable blue light emission. [ABSTRACT FROM AUTHOR]