Realization of atomically controlled dopant devices in silicon.

Subjects

Subjects :

Carbon chemistry
Crystallization
Electric Conductivity
Electrons
Hydrogen chemistry
Microscopy, Scanning Probe methods
Microscopy, Scanning Tunneling
Nanotechnology methods
Temperature
Time Factors
Metal Nanoparticles chemistry
Nanostructures chemistry
Silicon chemistry

Details

Language :

English

ISSN :

1613-6829

Volume :

3

Issue :

4

Database :

MEDLINE

Journal :

Small (Weinheim an der Bergstrasse, Germany)

Publication Type :

Academic Journal

Accession number :

17340667

Full Text :

https://doi.org/10.1002/smll.200600680