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GaAs core--shell nanowires for photovoltaic applications.
- Source :
-
Nano letters [Nano Lett] 2009 Jan; Vol. 9 (1), pp. 148-54. - Publication Year :
- 2009
-
Abstract
- We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.
- Subjects :
- Arsenicals radiation effects
Gallium radiation effects
Light
Nanostructures radiation effects
Nanostructures ultrastructure
Particle Size
Arsenicals chemistry
Crystallization methods
Electric Power Supplies
Electrochemistry methods
Gallium chemistry
Nanostructures chemistry
Nanotechnology methods
Photochemistry methods
Subjects
Details
- Language :
- English
- ISSN :
- 1530-6984
- Volume :
- 9
- Issue :
- 1
- Database :
- MEDLINE
- Journal :
- Nano letters
- Publication Type :
- Academic Journal
- Accession number :
- 19143502
- Full Text :
- https://doi.org/10.1021/nl802700u