[Study of exciton generation region of phosphorescent light emitting devices based on the changing electric field].

The changes of exciton generation region are influenced by varying electric field, which affect the color and efficiency performance of devices. Firstly, The authors fabricated two types of phosphorescent light emitting devices, device 1:ITO/PEDOT : PSS/PVK : Ir(ppy)s : DCJTB (100:2:1 wt)/BCP(10 nm)/Alq3 (15 nm)/Al, and device 2: ITO/PEDOT : PSS/ PVK : Ir(ppy)3 (100:2 wt)/BCP (10 nm)/Alq3(15 nm)/Al. The authors investigated the influences of electric field on exciton generation region in single-layer and multi-doped structure devices. Analysis of the electroluminescence spectrum under different voltages indicates that the emitting of Ir(ppy)3, PVK and DCJTB was enhanced with the increase in applied voltages. Compared to Ir(ppy)3, the emitting of PVK and DCJTB was prominently enhanced. This is because under high electric field it is easier high energy carrier to generate high energy exciton, and the emitting of wide-band-gap material PVK is stronger; on the other hand, the authors investigated the results from the aspect of energy band gap. DCJTB is narrow-band-gap material, which can capture carrier comparatively easily and emit stronger light. At the same time, we obtained a new emission peak located at 460 nm, which becomes comparatively weak with increasing voltage. In order to explore the reason, we fabricated the device: ITO/ PEDOT: PSS/PVK : BCP : Ir(ppy)3 (x:y:2 wt)/Alq3 (15 nm)/Al. The 460 nm emission peak doesn't disappear by changing the mass ratio of x and y. The authors speculate that the emission peak relates to PVK and BCP.