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Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy.
- Source :
-
Nanoscale research letters [Nanoscale Res Lett] 2010 Jul 18; Vol. 5 (10), pp. 1650-3. Date of Electronic Publication: 2010 Jul 18. - Publication Year :
- 2010
-
Abstract
- We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
Details
- Language :
- English
- ISSN :
- 1931-7573
- Volume :
- 5
- Issue :
- 10
- Database :
- MEDLINE
- Journal :
- Nanoscale research letters
- Publication Type :
- Academic Journal
- Accession number :
- 21076665
- Full Text :
- https://doi.org/10.1007/s11671-010-9689-8