Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography.

MLA

Larki, Farhad, et al. “Pinch-off Mechanism in Double-Lateral-Gate Junctionless Transistors Fabricated by Scanning Probe Microscope Based Lithography.” Beilstein Journal of Nanotechnology, vol. 3, 2012, pp. 817–23. EBSCOhost, https://doi.org/10.3762/bjnano.3.91.

APA

Larki, F., Dehzangi, A., Abedini, A., Abdullah, A. M., Saion, E., Hutagalung, S. D., Hamidon, M. N., & Hassan, J. (2012). Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography. Beilstein Journal of Nanotechnology, 3, 817–823. https://doi.org/10.3762/bjnano.3.91

Chicago

Larki, Farhad, Arash Dehzangi, Alam Abedini, Ahmad Makarimi Abdullah, Elias Saion, Sabar D Hutagalung, Mohd N Hamidon, and Jumiah Hassan. 2012. “Pinch-off Mechanism in Double-Lateral-Gate Junctionless Transistors Fabricated by Scanning Probe Microscope Based Lithography.” Beilstein Journal of Nanotechnology 3: 817–23. doi:10.3762/bjnano.3.91.