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Polytypic InP nanolaser monolithically integrated on (001) silicon.
- Source :
-
Nano letters [Nano Lett] 2013 Nov 13; Vol. 13 (11), pp. 5063-9. Date of Electronic Publication: 2013 Oct 02. - Publication Year :
- 2013
-
Abstract
- On-chip optical interconnects still miss a high-performance laser monolithically integrated on silicon. Here, we demonstrate a silicon-integrated InP nanolaser that operates at room temperature with a low threshold of 1.69 pJ and a large spontaneous emission factor of 0.04. An epitaxial scheme to grow relatively thick InP nanowires on (001) silicon is developed. The zincblende/wurtzite crystal phase polytypism and the formed type II heterostructures are found to promote lasing over a wide wavelength range.
Details
- Language :
- English
- ISSN :
- 1530-6992
- Volume :
- 13
- Issue :
- 11
- Database :
- MEDLINE
- Journal :
- Nano letters
- Publication Type :
- Academic Journal
- Accession number :
- 24073748
- Full Text :
- https://doi.org/10.1021/nl402145r