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A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer.
- Source :
-
Optics express [Opt Express] 2014 May 19; Vol. 22 (10), pp. 12289-95. - Publication Year :
- 2014
-
Abstract
- We demonstrate the first germanium-silicon C-band electro-absorption based waveguide modulator array and echelle-grating-based silicon wavelength multiplexer integrated with a digital CMOS driver circuit. A 9-channel, 10Gbps SiGe electro-absorption wavelength-multiplexed modulator array consumed a power of 5.8mW per channel while being modulated at 10.25Gbps by 40nm CMOS drivers delivering peak-to-peak voltage swings of 2V, achieving a modulation energy-efficiency of ~570fJ/bit including drivers. Performance up to 25Gbps on a single-channel SiGe modulator and CMOS driver is also reported.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 22
- Issue :
- 10
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 24921347
- Full Text :
- https://doi.org/10.1364/OE.22.012289