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A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer.

Authors :
Krishnamoorthy AV
Zheng X
Feng D
Lexau J
Buckwalter JF
Thacker HD
Liu F
Luo Y
Chang E
Amberg P
Shubin I
Djordjevic SS
Lee JH
Lin S
Liang H
Abed A
Shafiiha R
Raj K
Ho R
Asghari M
Cunningham JE
Source :
Optics express [Opt Express] 2014 May 19; Vol. 22 (10), pp. 12289-95.
Publication Year :
2014

Abstract

We demonstrate the first germanium-silicon C-band electro-absorption based waveguide modulator array and echelle-grating-based silicon wavelength multiplexer integrated with a digital CMOS driver circuit. A 9-channel, 10Gbps SiGe electro-absorption wavelength-multiplexed modulator array consumed a power of 5.8mW per channel while being modulated at 10.25Gbps by 40nm CMOS drivers delivering peak-to-peak voltage swings of 2V, achieving a modulation energy-efficiency of ~570fJ/bit including drivers. Performance up to 25Gbps on a single-channel SiGe modulator and CMOS driver is also reported.

Details

Language :
English
ISSN :
1094-4087
Volume :
22
Issue :
10
Database :
MEDLINE
Journal :
Optics express
Publication Type :
Academic Journal
Accession number :
24921347
Full Text :
https://doi.org/10.1364/OE.22.012289