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Aerosol jet printed p- and n-type electrolyte-gated transistors with a variety of electrode materials: exploring practical routes to printed electronics.

Authors :
Hong K
Kim SH
Mahajan A
Frisbie CD
Source :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2014 Nov 12; Vol. 6 (21), pp. 18704-11. Date of Electronic Publication: 2014 Nov 03.
Publication Year :
2014

Abstract

Printing electrically functional liquid inks is a promising approach for achieving low-cost, large-area, additive manufacturing of flexible electronic circuits. To print thin-film transistors, a basic building block of thin-film electronics, it is important to have several options for printable electrode materials that exhibit high conductivity, high stability, and low-cost. Here we report completely aerosol jet printed (AJP) p- and n-type electrolyte-gated transistors (EGTs) using a variety of different electrode materials including highly conductive metal nanoparticles (Ag), conducting polymers (polystyrenesulfonate doped poly(3,4-ethylendedioxythiophene, PEDOT:PSS), transparent conducting oxides (indium tin oxide), and carbon-based materials (reduced graphene oxide). Using these source-drain electrode materials and a PEDOT:PSS/ion gel gate stack, we demonstrated all-printed p- and n-type EGTs in combination with poly(3-hexythiophene) and ZnO semiconductors. All transistor components (including electrodes, semiconductors, and gate insulators) were printed by AJP. Both kinds of devices showed typical p- and n-type transistor characteristics, and exhibited both low-threshold voltages (<2 V) and high hole and electron mobilities. Our assessment suggests Ag electrodes may be the best option in terms of overall performance for both types of EGTs.

Details

Language :
English
ISSN :
1944-8252
Volume :
6
Issue :
21
Database :
MEDLINE
Journal :
ACS applied materials & interfaces
Publication Type :
Academic Journal
Accession number :
25323010
Full Text :
https://doi.org/10.1021/am504171u