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Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2).

Authors :
Keyshar K
Gong Y
Ye G
Brunetto G
Zhou W
Cole DP
Hackenberg K
He Y
Machado L
Kabbani M
Hart AH
Li B
Galvao DS
George A
Vajtai R
Tiwary CS
Ajayan PM
Source :
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2015 Aug 19; Vol. 27 (31), pp. 4640-8. Date of Electronic Publication: 2015 Jul 03.
Publication Year :
2015

Abstract

The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.<br /> (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Details

Language :
English
ISSN :
1521-4095
Volume :
27
Issue :
31
Database :
MEDLINE
Journal :
Advanced materials (Deerfield Beach, Fla.)
Publication Type :
Academic Journal
Accession number :
26140355
Full Text :
https://doi.org/10.1002/adma.201501795