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High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates.
- Source :
-
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2016 Mar 23; Vol. 28 (12), pp. 2316-21. Date of Electronic Publication: 2016 Jan 11. - Publication Year :
- 2016
-
Abstract
- Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.<br /> (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Details
- Language :
- English
- ISSN :
- 1521-4095
- Volume :
- 28
- Issue :
- 12
- Database :
- MEDLINE
- Journal :
- Advanced materials (Deerfield Beach, Fla.)
- Publication Type :
- Academic Journal
- Accession number :
- 26755196
- Full Text :
- https://doi.org/10.1002/adma.201504789