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Impact of silicon on Indian mustard (Brassica juncea L.) root traits by regulating growth parameters, cellular antioxidants and stress modulators under arsenic stress.

Authors :
Pandey C
Khan E
Panthri M
Tripathi RD
Gupta M
Source :
Plant physiology and biochemistry : PPB [Plant Physiol Biochem] 2016 Jul; Vol. 104, pp. 216-25. Date of Electronic Publication: 2016 Mar 28.
Publication Year :
2016

Abstract

Arsenic (As) is an emerging pollutant causing inhibition in growth and development of plants resulting into phytotoxicity. On the other hand, silicon (Si) has been suggested as a modulator in abiotic and biotic stresses that, enhances plant's physiological adaptations in response to several stresses including heavy metal stress. In this study, we used roots of hydroponically grown 14 day old seedlings of Brassica juncea var. Varuna treated with 150 μM As, 1.5 mM Si and both in combination for 96 h duration. Application of Si modulated the effect of As by improving morphological traits of root along with the development of both primary and lateral roots. Changes observed in root traits showed positive correlation with As induced cell death, accumulation of reactive oxygen species (ROS), nitric oxide (NO) and intracellular superoxide radicals (O2(-)). Addition of 1.5 mM Si during As stress increased accumulation of As in roots. Mineral nutrient analysis was done using energy-dispersive X-ray fluorescence (EDXRF) technique and positively correlated with increased cysteine, proline, MDA, H2O2 and activity of antioxidant enzymes (SOD, CAT and APX). The results obtained from the above biochemical approaches support the protective and active role of Si in the regulation of As stress through the changes in root developmental process.<br /> (Copyright © 2016 Elsevier Masson SAS. All rights reserved.)

Details

Language :
English
ISSN :
1873-2690
Volume :
104
Database :
MEDLINE
Journal :
Plant physiology and biochemistry : PPB
Publication Type :
Academic Journal
Accession number :
27038600
Full Text :
https://doi.org/10.1016/j.plaphy.2016.03.032