Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

MLA

Tsai, Shu-Ju, et al. “Approaching Defect-Free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric.” Scientific Reports, vol. 6, June 2016, p. 28326. EBSCOhost, https://doi.org/10.1038/srep28326.

APA

Tsai, S.-J., Wang, C.-L., Lee, H.-C., Lin, C.-Y., Chen, J.-W., Shiu, H.-W., Chang, L.-Y., Hsueh, H.-T., Chen, H.-Y., Tsai, J.-Y., Lu, Y.-H., Chang, T.-C., Tu, L.-W., Teng, H., Chen, Y.-C., Chen, C.-H., & Wu, C.-L. (2016). Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric. Scientific Reports, 6, 28326. https://doi.org/10.1038/srep28326

Chicago

Tsai, Shu-Ju, Chiang-Lun Wang, Hung-Chun Lee, Chun-Yeh Lin, Jhih-Wei Chen, Hong-Wei Shiu, Lo-Yueh Chang, et al. 2016. “Approaching Defect-Free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric.” Scientific Reports 6 (June): 28326. doi:10.1038/srep28326.