Back to Search
Start Over
Single Electron Gating of Topological Insulators.
- Source :
-
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2016 Dec; Vol. 28 (45), pp. 10073-10078. Date of Electronic Publication: 2016 Sep 28. - Publication Year :
- 2016
-
Abstract
- The effective gating of topological insulators is demonstrated, through the coupling of molecules to their surface. By using electric fields, they allow for dynamic control of the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single-electron transistor. These findings make hybrid molecule/topological interfaces functional elements while at the same time pushing miniaturization to its ultimate limit.<br /> (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Details
- Language :
- English
- ISSN :
- 1521-4095
- Volume :
- 28
- Issue :
- 45
- Database :
- MEDLINE
- Journal :
- Advanced materials (Deerfield Beach, Fla.)
- Publication Type :
- Academic Journal
- Accession number :
- 27677534
- Full Text :
- https://doi.org/10.1002/adma.201602413