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Spin-Orbit Coupling Induced Gap in Graphene on Pt(111) with Intercalated Pb Monolayer.

Authors :
Klimovskikh II
Otrokov MM
Voroshnin VY
Sostina D
Petaccia L
Di Santo G
Thakur S
Chulkov EV
Shikin AM
Source :
ACS nano [ACS Nano] 2017 Jan 24; Vol. 11 (1), pp. 368-374. Date of Electronic Publication: 2017 Jan 06.
Publication Year :
2017

Abstract

Graphene is one of the most promising materials for nanoelectronics owing to its unique Dirac cone-like dispersion of the electronic state and high mobility of the charge carriers. However, to facilitate the implementation of the graphene-based devices, an essential change of its electronic structure, a creation of the band gap should controllably be done. Brought about by two fundamentally different mechanisms, a sublattice symmetry breaking or an induced strong spin-orbit interaction, the band gap appearance can drive graphene into a narrow-gap semiconductor or a 2D topological insulator phase, respectively, with both cases being technologically relevant. The later case, characterized by a spin-orbit gap between the valence and conduction bands, can give rise to the spin-polarized topologically protected edge states. Here, we study the effect of the spin-orbit interaction enhancement in graphene placed in contact with a lead monolayer. By means of angle-resolved photoemission spectroscopy, we show that intercalation of the Pb interlayer between the graphene sheet and the Pt(111) surface leads to formation of a gap of ∼200 meV at the Dirac point of graphene. Spin-resolved measurements confirm the splitting to be of a spin-orbit nature, and the measured near-gap spin structure resembles that of the quantum spin Hall state in graphene, proposed by Kane and Mele [ Phys. Rev. Lett. 2005 , 95 , 226801 ]. With a bandstructure tuned in this way, graphene acquires a functionality going beyond its intrinsic properties and becomes more attractive for possible spintronic applications.

Details

Language :
English
ISSN :
1936-086X
Volume :
11
Issue :
1
Database :
MEDLINE
Journal :
ACS nano
Publication Type :
Academic Journal
Accession number :
28005333
Full Text :
https://doi.org/10.1021/acsnano.6b05982