Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.

MLA

He, Junfeng, et al. “Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.” Physical Review Letters, vol. 117, no. 26, Dec. 2016, p. 267201. EBSCOhost, https://doi.org/10.1103/PhysRevLett.117.267201.

APA

He, J., Zhang, C., Ghimire, N. J., Liang, T., Jia, C., Jiang, J., Tang, S., Chen, S., He, Y., Mo, S.-K., Hwang, C. C., Hashimoto, M., Lu, D. H., Moritz, B., Devereaux, T. P., Chen, Y. L., Mitchell, J. F., & Shen, Z.-X. (2016). Distinct Electronic Structure for the Extreme Magnetoresistance in YSb. Physical Review Letters, 117(26), 267201. https://doi.org/10.1103/PhysRevLett.117.267201

Chicago

He, Junfeng, Chaofan Zhang, Nirmal J Ghimire, Tian Liang, Chunjing Jia, Juan Jiang, Shujie Tang, et al. 2016. “Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.” Physical Review Letters 117 (26): 267201. doi:10.1103/PhysRevLett.117.267201.