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Ultrathin (Bi 1-x Sb x ) 2 Se 3 Field Effect Transistor with Large ON/OFF Ratio.
- Source :
-
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2017 Apr 12; Vol. 9 (14), pp. 12859-12864. Date of Electronic Publication: 2017 Mar 30. - Publication Year :
- 2017
-
Abstract
- Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi <subscript>1-x</subscript> Sb <subscript>x</subscript> ) <subscript>2</subscript> Se <subscript>3</subscript> ultrathin films were fabricated on SrTiO <subscript>3</subscript> substrate, where large resistance changes of ∼25 000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future.
Details
- Language :
- English
- ISSN :
- 1944-8252
- Volume :
- 9
- Issue :
- 14
- Database :
- MEDLINE
- Journal :
- ACS applied materials & interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 28318226
- Full Text :
- https://doi.org/10.1021/acsami.7b00541