Back to Search Start Over

Solution of the heavily stacking faulted crystal structure of the honeycomb iridate H 3 LiIr 2 O 6 .

Authors :
Bette S
Takayama T
Kitagawa K
Takano R
Takagi H
Dinnebier RE
Source :
Dalton transactions (Cambridge, England : 2003) [Dalton Trans] 2017 Nov 14; Vol. 46 (44), pp. 15216-15227.
Publication Year :
2017

Abstract

A powder sample of pure H <subscript>3</subscript> LiIr <subscript>2</subscript> O <subscript>6</subscript> was synthesized from α-Li <subscript>2</subscript> IrO <subscript>3</subscript> powder by a soft chemical replacement of Li <superscript>+</superscript> with H <superscript>+</superscript> . The crystal structure of H <subscript>3</subscript> LiIr <subscript>2</subscript> O <subscript>6</subscript> consists of sheets of edge sharing LiO <subscript>6</subscript> - and IrO <subscript>6</subscript> -octahedra forming a honeycomb network with layers stacked in a monoclinic distorted HCrO <subscript>2</subscript> type pattern. Heavy stacking faulting of the sheets is indicated by anisotropic peak broadening in the X-ray powder diffraction (XRPD) pattern. The ideal, faultless crystal structure was obtained by a Rietveld refinement of the laboratory XRPD pattern while using the LiIr <subscript>2</subscript> O <subscript>6</subscript> <superscript>3-</superscript> -layers of α-Li <subscript>2</subscript> IrO <subscript>3</subscript> as a starting model. The low radial distances of the PDF function, derived from synchrotron XRPD data, as constraints to stabilize the structural refinement. DIFFaX-simulations, structural considerations, high radial distances of the PDF function and a Rietveld compatible global optimization of a supercell were employed to derive a suitable faulting model and to refine the microstructure using the experimental data. We assumed that the overall stacking pattern of the layers in the structure of H <subscript>3</subscript> LiIr <subscript>2</subscript> O <subscript>6</subscript> is governed by interlayer O-HO contacts. From the constitution of the layers, different stacking patterns with similar amounts of strong O-HO contacts are considered. Random transitions among these stacking patterns can occur as faults in the crystal structure of H <subscript>3</subscript> LiIr <subscript>2</subscript> O <subscript>6</subscript> , which quantitatively describe the observed XRPD.

Details

Language :
English
ISSN :
1477-9234
Volume :
46
Issue :
44
Database :
MEDLINE
Journal :
Dalton transactions (Cambridge, England : 2003)
Publication Type :
Academic Journal
Accession number :
28959822
Full Text :
https://doi.org/10.1039/c7dt02978k