Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics.

MLA

Goswami, Sreetosh, et al. “Corrigendum: Robust Resistive Memory Devices Using Solution-Processable Metal-Coordinated Azo Aromatics.” Nature Materials, vol. 17, no. 1, Dec. 2017, p. 103. EBSCOhost, https://doi.org/10.1038/nmat5059.

APA

Goswami, S., Matula, A. J., Rath, S. P., Hedström, S., Saha, S., Annamalai, M., Sengupta, D., Patra, A., Ghosh, S., Jani, H., Sarkar, S., Motapothula, M. R., Nijhuis, C. A., Martin, J., Goswami, S., Batista, V. S., & Venkatesan, T. (2017). Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. Nature Materials, 17(1), 103. https://doi.org/10.1038/nmat5059

Chicago

Goswami, Sreetosh, Adam J Matula, Santi P Rath, Svante Hedström, Surajit Saha, Meenakshi Annamalai, Debabrata Sengupta, et al. 2017. “Corrigendum: Robust Resistive Memory Devices Using Solution-Processable Metal-Coordinated Azo Aromatics.” Nature Materials 17 (1): 103. doi:10.1038/nmat5059.