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Correlated Chemical and Electrically Active Dopant Analysis in Catalyst-Free Si-Doped InAs Nanowires.
- Source :
-
ACS nano [ACS Nano] 2018 Feb 27; Vol. 12 (2), pp. 1603-1610. Date of Electronic Publication: 2018 Feb 06. - Publication Year :
- 2018
-
Abstract
- Direct correlations between dopant incorporation, distribution, and their electrical activity in semiconductor nanowires (NW) are difficult to access and require a combination of advanced nanometrology methods. Here, we present a comprehensive investigation of the chemical and electrically active dopant concentrations in n-type Si-doped InAs NW grown by catalyst-free molecular beam epitaxy using various complementary techniques. N-type carrier concentrations are determined by Seebeck effect measurements and four-terminal NW field-effect transistor characterization and compared with the Si dopant distribution analyzed by local electrode atom probe tomography. With increased dopant supply, a distinct saturation of the free carrier concentration is observed in the mid-10 <superscript>18</superscript> cm <superscript>-3</superscript> range. This behavior coincides with the incorporated Si dopant concentrations in the bulk part of the NW, suggesting the absence of compensation effects. Importantly, excess Si dopants with very high concentrations (>10 <superscript>20</superscript> cm <superscript>-3</superscript> ) segregate at the NW sidewall surfaces, which confirms recent first-principles calculations and results in modifications of the surface electronic properties that are sensitively probed by field-effect measurements. These findings are expected to be relevant also for doping studies of other noncatalytic III-V NW systems.
Details
- Language :
- English
- ISSN :
- 1936-086X
- Volume :
- 12
- Issue :
- 2
- Database :
- MEDLINE
- Journal :
- ACS nano
- Publication Type :
- Academic Journal
- Accession number :
- 29385327
- Full Text :
- https://doi.org/10.1021/acsnano.7b08197