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Tailoring the Open-Circuit Voltage Deficit of Wide-Band-Gap Perovskite Solar Cells Using Alkyl Chain-Substituted Fullerene Derivatives.
- Source :
-
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2018 Jul 05; Vol. 10 (26), pp. 22074-22082. Date of Electronic Publication: 2018 Jun 21. - Publication Year :
- 2018
-
Abstract
- Wide-band-gap (WB) perovskite devices are promising as the top cell of silicon-perovskite tandem devices to boost the efficiency beyond the Shockley-Queisser limit. Here, we tailor the performance parameters of WB mixed-halide perovskite solar cell with long alkyl chain-substituted fullerene derivatives as an electron transport layer (ETL). The device with C <subscript>60</subscript> -fused N-methylpyrrolidine- meta-dodecyl phenyl (C <subscript>60</subscript> MC <subscript>12</subscript> ) demonstrates an enhanced power conversion efficiency of 16.74% with the record open circuit voltage ( V <subscript>OC</subscript> ) of 1.24 V, an increase by 70 mV with concomitant V <subscript>OC</subscript> deficit reduction to 0.47 V. This is achieved by mitigating the recombination loss through the use of highly crystalline C <subscript>60</subscript> MC <subscript>12</subscript> film compared to amorphous [6,6]-phenyl-C <subscript>61</subscript> -butyric acid methyl ester layer. The device analysis reveals the soothing of the defect activities with shallower defect states and passivation of the interface recombination centers for the device with C <subscript>60</subscript> MC <subscript>12</subscript> . We ascribe this property to the crystallinity of fullerene derivatives as ETL, which is also important for the optimization of device parameters, besides the band alignment matching of WB perovskite devices.
Details
- Language :
- English
- ISSN :
- 1944-8252
- Volume :
- 10
- Issue :
- 26
- Database :
- MEDLINE
- Journal :
- ACS applied materials & interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 29888594
- Full Text :
- https://doi.org/10.1021/acsami.8b04439