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Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films.

Authors :
Raza M
Sanna S
Dos Santos Gómez L
Gautron E
El Mel AA
Pryds N
Snyders R
Konstantinidis S
Esposito V
Source :
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2018 Nov 07; Vol. 20 (41), pp. 26068-26071. Date of Electronic Publication: 2018 Oct 11.
Publication Year :
2018

Abstract

The cubic phase of pure zirconia (ZrO <subscript>2</subscript> ) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transport, which is superior to what is obtained with similar yttrium-stabilized cubic zirconia thin films.

Details

Language :
English
ISSN :
1463-9084
Volume :
20
Issue :
41
Database :
MEDLINE
Journal :
Physical chemistry chemical physics : PCCP
Publication Type :
Academic Journal
Accession number :
30307015
Full Text :
https://doi.org/10.1039/c8cp05465g