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Graphene/ZnO Nanowire/p-GaN Vertical Junction for a High-Performance Nanoscale Light Source.
- Source :
-
ACS omega [ACS Omega] 2020 Feb 21; Vol. 5 (8), pp. 4133-4138. Date of Electronic Publication: 2020 Feb 21 (Print Publication: 2020). - Publication Year :
- 2020
-
Abstract
- We report on a high-brightness ultraviolet (UV) nanoscale light source. The light emission diodes are constructed with graphene/ZnO nanowire/p-GaN vertical junctions, which exhibit strong UV electroluminescence (EL) emissions centered at a wavelength of 397 nm at one end of the ZnO nanowire. Compared to the horizontal heterojunction, the vertical junction based on the ZnO nanowire increases the interface area of the heterojunction along with a high-quality interface, thus making the device robust under a large excitation current. In this structure, transparent flexible graphene is used as the top electrode, which can effectively improve performance by increasing the carrier injection area. Moreover, by analyzing the relationship between the integrated light intensity and applied bias, a superlinear dependency with a slope of 3.99 is observed, which means high electrical-to-optical conversion efficiency. Three electron-hole irradiation recombination processes are distinguished according to the EL emission spectra.<br />Competing Interests: The authors declare no competing financial interest.<br /> (Copyright © 2020 American Chemical Society.)
Details
- Language :
- English
- ISSN :
- 2470-1343
- Volume :
- 5
- Issue :
- 8
- Database :
- MEDLINE
- Journal :
- ACS omega
- Publication Type :
- Academic Journal
- Accession number :
- 32149242
- Full Text :
- https://doi.org/10.1021/acsomega.9b03858