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Engineering Se vacancies to promote the intrinsic activities of P doped NiSe 2 nanosheets for overall water splitting.
- Source :
-
Journal of colloid and interface science [J Colloid Interface Sci] 2020 Jul 01; Vol. 571, pp. 260-266. Date of Electronic Publication: 2020 Mar 16. - Publication Year :
- 2020
-
Abstract
- Element doping is a general and effective approach to modify the electrocatalytic performances, but the low intrinsic activity in each electroactive site still limits the further improvements. Herein, we provide an effective strategy by simultaneously introducing P doping and Se vacancies to enhance the intrinsic activities in NiSe <subscript>2</subscript> nanosheet arrays (A-NiSe <subscript>2</subscript> |P) through Ar plasma treatment. Owing to the increased active sites and enhanced electrical conductivity, the resulted A-NiSe <subscript>2</subscript> |P shows the enhanced hydrogen evolution performances. Theoretical calculations reveal that introduction of Se vacancies plays a significant role in lowering the adsorption free energy of H* in Ni, Se and P sites, leading to promoted intrinsic activities in A-NiSe <subscript>2</subscript> |P. Further, A-NiSe <subscript>2</subscript> |P as bifunctional electrocatalysts only needs 1.62 V to reach 10 mA cm <superscript>-2</superscript> for overall water splitting. Our study and understanding of A-NiSe <subscript>2</subscript> |P may highlight the importance of element doping and vacancies in enhancing the catalytic activities in overall water splitting.<br />Competing Interests: Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.<br /> (Copyright © 2020 Elsevier Inc. All rights reserved.)
Details
- Language :
- English
- ISSN :
- 1095-7103
- Volume :
- 571
- Database :
- MEDLINE
- Journal :
- Journal of colloid and interface science
- Publication Type :
- Academic Journal
- Accession number :
- 32203762
- Full Text :
- https://doi.org/10.1016/j.jcis.2020.03.053