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A large-area luminescent downshifting layer containing an Eu 3+ complex for crystalline silicon solar cells.
- Source :
-
Dalton transactions (Cambridge, England : 2003) [Dalton Trans] 2020 Apr 21; Vol. 49 (15), pp. 4725-4731. Date of Electronic Publication: 2020 Mar 24. - Publication Year :
- 2020
-
Abstract
- The spectral mismatch between the distribution of sunlight (AM1.5G) and crystalline silicon (c-Si) solar cells is one of the most important limiting factors of the conversion efficiency of photovoltaic (PV) devices. As an effective solution, the use of the luminescence down-shifting (LDS) technique is an important way to improve the short-wavelength response of a solar cell by shifting high-energy photons to the visible range. Herein, a large-area (17 × 17 cm <superscript>2</superscript> ) luminescent thin film consisting of a ternary europium (Eu <superscript>3+</superscript> ) complex and polyvinyl alcohol (PVA) was successfully constructed through a solution casting method and further developed as an effective LDS layer to improve the photoelectric conversion efficiency of c-Si solar cells with a large active area (235 cm <superscript>2</superscript> ). The self-standing LDS layer is flexible, transparent and easily attachable to the surface of the solar cell module. Compared with the uncoated c-Si solar cell, the one coated with the LDS layer displayed an enhancement of ∼15% in external quantum efficiency (EQE) due to the high luminescence quantum yield of the Eu <superscript>3+</superscript> complex doped inside the layer. These results demonstrate that use of a large area luminescent film embedding an Eu <superscript>3+</superscript> complex is a versatile and effective strategy to improve the conversion efficiency of large size PV devices, giving rise to its great potential application as an LDS material.
Details
- Language :
- English
- ISSN :
- 1477-9234
- Volume :
- 49
- Issue :
- 15
- Database :
- MEDLINE
- Journal :
- Dalton transactions (Cambridge, England : 2003)
- Publication Type :
- Academic Journal
- Accession number :
- 32207480
- Full Text :
- https://doi.org/10.1039/c9dt04858h