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Intrinsic Capacitance of Molybdenum Disulfide.

Authors :
Chen J
Walker WR
Xu L
Krysiak O
She Z
Pope MA
Source :
ACS nano [ACS Nano] 2020 May 26; Vol. 14 (5), pp. 5636-5648. Date of Electronic Publication: 2020 Apr 27.
Publication Year :
2020

Abstract

The metallic, 1T polymorph of molybdenum disulfide (MoS <subscript>2</subscript> ) is promising for next-generation supercapacitors due to its high theoretical surface area and density which lead to high volumetric capacitance. Despite this, there are few fundamental works examining the double-layer charging mechanisms at the MoS <subscript>2</subscript> /electrolyte interface. This study examines the potential-dependent and frequency-dependent area-specific double-layer capacitance ( C <subscript>a</subscript> ) of the 1T and 2H polymorphs of MoS <subscript>2</subscript> in aqueous and organic electrolytes. Furthermore, we investigate restacking effects and possible intercalation-like mechanisms in multilayer films. To minimize the uncertainties associated with porous electrodes, we carry out measurements using effectively nonporous monolayers of MoS <subscript>2</subscript> and contrast their behavior with reduced graphene oxide deposited layer-by-layer on atomically flat graphite single crystals using a modified, barrier-free Langmuir-Blodgett method. The metallic 1T polymorph of MoS <subscript>2</subscript> ( C <subscript>a,1T</subscript> = 14.9 μF/cm <superscript>2</superscript> ) is shown to have over 10-fold the capacitance of the semiconducting 2H polymorph ( C <subscript>a,2H</subscript> = 1.35 μF/cm <superscript>2</superscript> ) near the open circuit potential and under negative polarization in aqueous electrolyte. However, under positive polarization the capacitance is significantly reduced and behaves similarly to the 2H polymorph. The capacitance of 1T MoS <subscript>2</subscript> scales with layer number, even at high frequency, suggesting easy and rapid ion penetration between the restacked sheets. This model system allows us to determine capacitance limits for MoS <subscript>2</subscript> and suggest strategies to increase the energy density of devices made from this promising material.

Details

Language :
English
ISSN :
1936-086X
Volume :
14
Issue :
5
Database :
MEDLINE
Journal :
ACS nano
Publication Type :
Academic Journal
Accession number :
32315150
Full Text :
https://doi.org/10.1021/acsnano.9b10182