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Atomic reconstruction in twisted bilayers of transition metal dichalcogenides.

Authors :
Weston A
Zou Y
Enaldiev V
Summerfield A
Clark N
Zólyomi V
Graham A
Yelgel C
Magorrian S
Zhou M
Zultak J
Hopkinson D
Barinov A
Bointon TH
Kretinin A
Wilson NR
Beton PH
Fal'ko VI
Haigh SJ
Gorbachev R
Source :
Nature nanotechnology [Nat Nanotechnol] 2020 Jul; Vol. 15 (7), pp. 592-597. Date of Electronic Publication: 2020 May 25.
Publication Year :
2020

Abstract

Van der Waals heterostructures form a unique class of layered artificial solids in which physical properties can be manipulated through controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic-resolution transmission electron microscopy to reveal the lattice reconstruction in twisted bilayers of the transition metal dichalcogenides, MoS <subscript>2</subscript> and WS <subscript>2</subscript> . For twisted 3R bilayers, a tessellated pattern of mirror-reflected triangular 3R domains emerges, separated by a network of partial dislocations for twist angles θ < 2°. The electronic properties of these 3R domains, featuring layer-polarized conduction-band states caused by lack of both inversion and mirror symmetry, appear to be qualitatively different from those of 2H transition metal dichalcogenides. For twisted 2H bilayers, stable 2H domains dominate, with nuclei of a second metastable phase. This appears as a kagome-like pattern at θ ≈ 2°, transitioning at θ → 0 to a hexagonal array of screw dislocations separating large-area 2H domains. Tunnelling measurements show that such reconstruction creates strong piezoelectric textures, opening a new avenue for engineering of 2D material properties.

Details

Language :
English
ISSN :
1748-3395
Volume :
15
Issue :
7
Database :
MEDLINE
Journal :
Nature nanotechnology
Publication Type :
Academic Journal
Accession number :
32451502
Full Text :
https://doi.org/10.1038/s41565-020-0682-9