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Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates.
- Source :
-
Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2021 Aug 01; Vol. 21 (8), pp. 4429-4433. - Publication Year :
- 2021
-
Abstract
- Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substrates widely distributed are AlGaN/GaN on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency ( f <subscript>T</subscript> ) or high maximum oscillation frequency ( f <subscript>max</subscript> ), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm·K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on a sapphire substrate is 0.33 W/cm·K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm·K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm·K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD diamond substrate. We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.
Details
- Language :
- English
- ISSN :
- 1533-4899
- Volume :
- 21
- Issue :
- 8
- Database :
- MEDLINE
- Journal :
- Journal of nanoscience and nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 33714339
- Full Text :
- https://doi.org/10.1166/jnn.2021.19421