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Band Gap Engineering in Acceptor-Donor-Acceptor Boron Difluoride Formazanates.

Authors :
Dhindsa JS
Buguis FL
Anghel M
Gilroy JB
Source :
The Journal of organic chemistry [J Org Chem] 2021 Sep 03; Vol. 86 (17), pp. 12064-12074. Date of Electronic Publication: 2021 Aug 06.
Publication Year :
2021

Abstract

π-Conjugated molecules with acceptor-donor-acceptor (A-D-A) electronic structures make up an important class of materials due to their tunable optoelectronic properties and applications in, for example, organic light-emitting diodes, nonlinear optical devices, and organic solar cells. The frontier molecular orbital energies, and thus band gaps, of these materials can be tuned by varying the donor and acceptor traits and π-electron counts of the structural components. Herein, we report the synthesis and characterization of a series of A-D-A compounds consisting of BF <subscript>2</subscript> formazanates as electron acceptors bridged by a variety of π-conjugated donors. The results, which are supported by density functional theory calculations, demonstrate rational control of optoelectronic properties and the ability to tune the corresponding band gaps. The narrowest band gaps (E <subscript>g</subscript> <superscript>Opt</superscript> = 1.38 eV and E <subscript>g</subscript> <superscript>CV</superscript> = 1.21 eV) were observed when BF <subscript>2</subscript> formazanates and benzodithiophene units were combined. This study provides significant insight into the band gap engineering of materials derived from BF <subscript>2</subscript> formazanates and will inform their future development as semiconductors for use in organic electronics.

Details

Language :
English
ISSN :
1520-6904
Volume :
86
Issue :
17
Database :
MEDLINE
Journal :
The Journal of organic chemistry
Publication Type :
Academic Journal
Accession number :
34355898
Full Text :
https://doi.org/10.1021/acs.joc.1c01416