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Interstitial Nature of Mn 2+ Doping in 2D Perovskites.
- Source :
-
ACS nano [ACS Nano] 2021 Dec 28; Vol. 15 (12), pp. 20550-20561. Date of Electronic Publication: 2021 Dec 09. - Publication Year :
- 2021
-
Abstract
- Halide perovskites doped with magnetic impurities (such as the transition metals Mn <superscript>2+</superscript> , Co <superscript>2+</superscript> , Ni <superscript>2+</superscript> ) are being explored for a wide range of applications beyond photovoltaics, such as spintronic devices, stable light-emitting diodes, single-photon emitters, and magneto-optical devices. However, despite several recent studies, there is no consensus on whether the doped magnetic ions will predominantly replace the octahedral B-site metal via substitution or reside at interstitial defect sites. Here, by performing correlated nanoscale X-ray microscopy, spatially and temporally resolved photoluminescence measurements, and magnetic force microscopy on the inorganic 2D perovskite Cs <subscript>2</subscript> PbI <subscript>2</subscript> Cl <subscript>2</subscript> , we show that doping Mn <superscript>2+</superscript> into the structure results in a lattice expansion. The observed lattice expansion contrasts with the predicted contraction expected to arise from the B-site metal substitution, thus implying that Mn <superscript>2+</superscript> does not replace the Pb <superscript>2+</superscript> sites. Photoluminescence and electron paramagnetic resonance measurements confirm the presence of Mn <superscript>2+</superscript> in the lattice, while correlated nano-XRD and X-ray fluorescence track the local strain and chemical composition. Density functional theory calculations predict that Mn <superscript>2+</superscript> atoms reside at the interstitial sites between two octahedra in the triangle formed by one Cl <superscript>-</superscript> and two I <superscript>-</superscript> atoms, which results in a locally expanded structure. These measurements show the fate of the transition metal dopants, the local structure, and optical emission when they are doped at dilute concentrations into a wide band gap semiconductor.
Details
- Language :
- English
- ISSN :
- 1936-086X
- Volume :
- 15
- Issue :
- 12
- Database :
- MEDLINE
- Journal :
- ACS nano
- Publication Type :
- Academic Journal
- Accession number :
- 34882393
- Full Text :
- https://doi.org/10.1021/acsnano.1c09142