Cite
Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing.
MLA
Luo, Zheng-Dong, et al. “Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing.” ACS Nano, vol. 16, no. 2, Feb. 2022, pp. 3362–72. EBSCOhost, https://doi.org/10.1021/acsnano.2c00079.
APA
Luo, Z.-D., Zhang, S., Liu, Y., Zhang, D., Gan, X., Seidel, J., Liu, Y., Han, G., Alexe, M., & Hao, Y. (2022). Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing. ACS Nano, 16(2), 3362–3372. https://doi.org/10.1021/acsnano.2c00079
Chicago
Luo, Zheng-Dong, Siqing Zhang, Yan Liu, Dawei Zhang, Xuetao Gan, Jan Seidel, Yang Liu, Genquan Han, Marin Alexe, and Yue Hao. 2022. “Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing.” ACS Nano 16 (2): 3362–72. doi:10.1021/acsnano.2c00079.