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Universal p-Type Doping via Lewis Acid for 2D Transition-Metal Dichalcogenides.
- Source :
-
ACS nano [ACS Nano] 2022 Mar 22; Vol. 16 (3), pp. 4884-4891. Date of Electronic Publication: 2022 Feb 16. - Publication Year :
- 2022
-
Abstract
- Developing spatially controlled and universal p-type doping of transition-metal dichalcogenides (TMDs) is critical for optoelectronics. Here, a facile and universal p-doping strategy via Sn <superscript>4+</superscript> ions exchanging is proposed and the p-doping of PdSe <subscript>2</subscript> is demonstrated systematically as the example. The polarity of PdSe <subscript>2</subscript> can be modulated from n-type to bipolar and p-type precisely by changing the concentration of SnCl <subscript>4</subscript> solution. The modulation effectively reduces the electron concentration and improves the work function by ∼72 meV. In addition, the solution-processable route makes the spatially controlled doping possible, which is demonstrated by constructing the lateral PdSe <subscript>2</subscript> p-n homojunction with rectification behavior and photovoltaic effect. This p-doping method has been further proved in modulating various TMDs including WSe <subscript>2</subscript> , WS <subscript>2</subscript> , ReSe <subscript>2</subscript> , MoSe <subscript>2</subscript> , MoTe <subscript>2</subscript> , and PtSe <subscript>2</subscript> . This spatially controlled and universal method based on Sn atoms substitution realizes p-type doping of TMDs.
Details
- Language :
- English
- ISSN :
- 1936-086X
- Volume :
- 16
- Issue :
- 3
- Database :
- MEDLINE
- Journal :
- ACS nano
- Publication Type :
- Academic Journal
- Accession number :
- 35171569
- Full Text :
- https://doi.org/10.1021/acsnano.2c00513