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Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se 2 Heterojunctions.
- Source :
-
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Apr 13; Vol. 14 (14), pp. 16780-16790. Date of Electronic Publication: 2022 Apr 05. - Publication Year :
- 2022
-
Abstract
- In this study, we investigated band alignments at CdS/epitaxial CuIn <subscript> x </subscript> Ga <subscript>1- x </subscript> Se <subscript>2</subscript> (epi-CIGSe) and epi-CIGSe/GaAs heterointerfaces for solar cell applications using ultraviolet, inverse, and X-ray photoemission spectroscopy (UPS, IPES, and XPS) techniques. We clarified the impacts of KF postdeposition treatment (KF-PDT) at the CdS/epi-CIGSe front heterointerfaces. We found that KF-PDT changed the conduction band alignment at the CdS/epi-CIGSe heterointerface from a cliff to flat configuration, attributed to an increase in the electron affinity ( E <subscript>A</subscript> ) and ionization potential ( I <subscript>P</subscript> ) of the epi-CIGSe surface because of a decrease in Cu and Ga contents. Herein, we discuss the correlation between the impacts of KF-PDT and the solar cell performance. Furthermore, we also investigated the band alignment at the epi-CIGSe/GaAs rear heterointerface. Electron barriers were formed at the epi-CIGSe/GaAs interface, suppressing carrier recombination as the back surface field. Contrarily, a hole accumulation layer is formed by the valence band bending, which is like Ohmic contact.
Details
- Language :
- English
- ISSN :
- 1944-8252
- Volume :
- 14
- Issue :
- 14
- Database :
- MEDLINE
- Journal :
- ACS applied materials & interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 35380044
- Full Text :
- https://doi.org/10.1021/acsami.1c21193