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Solution-processable and photopolymerisable TiO 2 nanorods as dielectric layers for thin film transistors.
- Source :
-
RSC advances [RSC Adv] 2020 Jul 06; Vol. 10 (43), pp. 25540-25546. Date of Electronic Publication: 2020 Jul 06 (Print Publication: 2020). - Publication Year :
- 2020
-
Abstract
- We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 10 <superscript>4</superscript> , a turn-on voltage ( V <subscript>ON</subscript> ) of 1.2 V and a threshold voltage ( V <subscript>T</subscript> ) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer ( k = 7-9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO <subscript>2</subscript> nanorods. A solution processed zinc oxide (ZnO) layer acts as the semiconductor. The new surface-modified TiO <subscript>2</subscript> nanorods were synthesised using a ligand replacement process with a monolayer coating of photopolymerisable 10-undecynylphosphonic acid (10UCYPA) to render them both soluble in common organic solvents and be photopolymerisable using UV-illumination after having been deposited on substrate surfaces from solution and drying.<br />Competing Interests: There are no conflicts to declare.<br /> (This journal is © The Royal Society of Chemistry.)
Details
- Language :
- English
- ISSN :
- 2046-2069
- Volume :
- 10
- Issue :
- 43
- Database :
- MEDLINE
- Journal :
- RSC advances
- Publication Type :
- Academic Journal
- Accession number :
- 35518573
- Full Text :
- https://doi.org/10.1039/d0ra04445h