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Realization of Ultra-Scaled MoS 2 Vertical Diodes via Double-Side Electrodes Lamination.
- Source :
-
Nano letters [Nano Lett] 2022 Jun 08; Vol. 22 (11), pp. 4429-4436. Date of Electronic Publication: 2022 May 26. - Publication Year :
- 2022
-
Abstract
- Schottky diode is the fundamental building blocks for modern electronics and optoelectronics. Reducing the semiconductor layer thickness could shrink the vertical size of a Schottky diode, improving its speed and integration density. Here, we demonstrate a new approach to fabricate a Schottky diode with ultrashort physical length approaching atomic limit. By mechanically laminating prefabricated metal electrodes on both-sides of two-dimensional MoS <subscript>2</subscript> , the intrinsic metal-semiconductor interfaces can be well retained. As a result, we demonstrate the thinnest Schottky diode with a length of 2.6 nm and decent rectification behavior. Furthermore, with a diode length smaller than the semiconductor depletion length, the carrier transport mechanisms are investigated and explained by thickness-dependent and temperature-dependent electrical measurements. Our study not only pushes the scaling limit of a Schottky diode but also provides a general double-sided electrodes integration approach for other ultrathin vertical devices.
Details
- Language :
- English
- ISSN :
- 1530-6992
- Volume :
- 22
- Issue :
- 11
- Database :
- MEDLINE
- Journal :
- Nano letters
- Publication Type :
- Academic Journal
- Accession number :
- 35616710
- Full Text :
- https://doi.org/10.1021/acs.nanolett.2c00922