First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga 2 O 3 .

MLA

Ma, Yueyang, et al. “First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga 2 O 3 .” ACS Applied Materials & Interfaces, vol. 14, no. 42, Oct. 2022, pp. 48220–28. EBSCOhost, https://doi.org/10.1021/acsami.2c12266.

APA

Ma, Y., Dong, L., Li, P., Hu, L., Lu, B., Miao, Y., Peng, B., Tian, A., & Liu, W. (2022). First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga 2 O 3 . ACS Applied Materials & Interfaces, 14(42), 48220–48228. https://doi.org/10.1021/acsami.2c12266

Chicago

Ma, Yueyang, Linpeng Dong, Penghui Li, Lanting Hu, Bin Lu, Yuanhao Miao, Bo Peng, Ailing Tian, and Weiguo Liu. 2022. “First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga 2 O 3 .” ACS Applied Materials & Interfaces 14 (42): 48220–28. doi:10.1021/acsami.2c12266.