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Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine).
- Source :
-
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 May 17; Vol. 15 (19), pp. 23546-23556. Date of Electronic Publication: 2023 May 02. - Publication Year :
- 2023
-
Abstract
- To better understand the structure-property relationship and the significance of the donor-acceptor (D-A) system in resistive memory devices, a series of new organic small molecules with A-π-D-π-A- and D-π-D-π-D-based architecture comprising a bis(triphenylamine) core unit and ethynyl-linked electron donor/acceptor arms were designed and synthesized. The devices with A-π-D-π-A structures exhibited write-once-read-many memory behavior with a good retention time of 1000 s while those based on D-π-D-π-D molecules presented only conductor property. The compound with nitrophenyl substitution resulted in a higher ON/OFF current ratio of 10 <superscript>4</superscript> , and the fluorophenyl substitution exhibited the lowest threshold voltage of -1.19 V. Solubility of the compounds in common organic solvents suggests that they are promising candidates for economic solution-processable techniques. Density functional theory calculations were used to envision the frontier molecular orbitals and to support the proposed resistive switching mechanisms. It is inferred that the presence of donor/acceptor substituents has a significant impact on the highest occupied molecular orbital-lowest unoccupied molecular orbital energy levels of the molecules, which affects their memory-switching behavior and thus suggests that a D-A architecture is ideal for memory device resistance switching characteristics.
Details
- Language :
- English
- ISSN :
- 1944-8252
- Volume :
- 15
- Issue :
- 19
- Database :
- MEDLINE
- Journal :
- ACS applied materials & interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 37130268
- Full Text :
- https://doi.org/10.1021/acsami.3c00439