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Achieving Bright Organic Light-Emitting Field-Effect Transistors with Sustained Efficiency through Hybrid Contact Design.

Authors :
Chiu SW
Hsu A
Ying L
Liaw YK
Lin KT
Ruan J
Samuel IDW
Hsu BBY
Source :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Jun 28; Vol. 15 (25), pp. 30524-30533. Date of Electronic Publication: 2023 Jun 13.
Publication Year :
2023

Abstract

Organic light-emitting field-effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light-emitting diodes. However, these devices face a major challenge of imbalance charge transport, leading to a severe efficiency roll-off at high brightness. Here, we propose a solution to this challenge by introducing a transparent organic/inorganic hybrid contact with specially designed electronic structures. Our design aims to steadily accumulate the electrons injected into the emissive polymer, allowing the light-emitting interface to effectively capture more holes even when the hole current increases. Our numerical simulations show that the capture efficiency of these steady electrons will dominate charge recombination and lead to a sustained external quantum efficiency of 0.23% over 3 orders of magnitude of brightness (4 to 7700 cd/m <superscript>2</superscript> ) and current density (1.2 to 2700 mA/cm <superscript>2</superscript> ) from -4 to -100 V. The same enhancement is retained even after increasing the external quantum efficiency (EQE) to 0.51%. The high and tunable brightness with stable efficiency offered by hybrid-contact OLEFETs makes them ideal light-emitting devices for various applications. These devices have the potential to revolutionize the field of organic electronics by overcoming the fundamental challenge of imbalance charge transport.

Details

Language :
English
ISSN :
1944-8252
Volume :
15
Issue :
25
Database :
MEDLINE
Journal :
ACS applied materials & interfaces
Publication Type :
Academic Journal
Accession number :
37310808
Full Text :
https://doi.org/10.1021/acsami.3c01842