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A FIN-LDMOS with Bulk Electron Accumulation Effect.
- Source :
-
Micromachines [Micromachines (Basel)] 2023 Jun 10; Vol. 14 (6). Date of Electronic Publication: 2023 Jun 10. - Publication Year :
- 2023
-
Abstract
- A thin Silicon-On-Insulator (SOI) LDMOS with ultralow Specific On-Resistance ( R <subscript>on,sp</subscript> ) is proposed, and the physical mechanism is investigated by Sentaurus. It features a FIN gate and an extended superjunction trench gate to obtain a Bulk Electron Accumulation (BEA) effect. The BEA consists of two p-regions and two integrated back-to-back diodes, then the gate potential V <subscript>GS</subscript> is extended through the whole p-region. Additionally, the gate oxide W <subscript>oxide</subscript> is inserted between the extended superjunction trench gate and N-drift. In the on-state, the 3D electron channel is produced at the P-well by the FIN gate, and the high-density electron accumulation layer formed in the drift region surface provides an extremely low-resistance current path, which dramatically decreases the R <subscript>on,sp</subscript> and eases the dependence of R <subscript>on,sp</subscript> on the drift doping concentration ( N <subscript>drift</subscript> ). In the off-state, the two p-regions and N-drift deplete from each other through the gate oxide W <subscript>oxide</subscript> like the conventional SJ. Meanwhile, the Extended Drain (ED) increases the interface charge and reduces the R <subscript>on,sp</subscript> . The 3D simulation results show that the BV and R <subscript>on,sp</subscript> are 314 V and 1.84 mΩ∙cm <superscript>-2</superscript> , respectively. Consequently, the FOM is high, reaching up to 53.49 MW/cm <superscript>2</superscript> , which breaks through the silicon limit of the RESURF.
Details
- Language :
- English
- ISSN :
- 2072-666X
- Volume :
- 14
- Issue :
- 6
- Database :
- MEDLINE
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 37374809
- Full Text :
- https://doi.org/10.3390/mi14061225