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TiO 2 -modified MoS 2 monolayer films enable sensitive NH 3 sensing at room temperature.

Authors :
Tan L
Liu X
Wu P
Cao L
Li W
Li A
Wang Z
Gu H
Source :
Nanoscale [Nanoscale] 2023 Sep 14; Vol. 15 (35), pp. 14514-14522. Date of Electronic Publication: 2023 Sep 14.
Publication Year :
2023

Abstract

The research and development of high-performance NH <subscript>3</subscript> sensors are of great significance for environment monitoring and disease diagnosis applications. Two-dimensional (2D) MoS <subscript>2</subscript> nanomaterials have exhibited great potential for building room-temperature (RT) NH <subscript>3</subscript> sensors but still suffer from relatively low sensitivity. Herein, the TiO <subscript>2</subscript> -modified monolayer MoS <subscript>2</subscript> films with controllable TiO <subscript>2</subscript> loading contents are fabricated by a facile approach. A remarkable enhancement in the RT NH <subscript>3</subscript> sensing performance is achieved after the n - n hetero-compositing of the TiO <subscript>2</subscript> /MoS <subscript>2</subscript> system. The device with 95% surface coverage of TiO <subscript>2</subscript> shows enhanced sensor response, low detection limit (0.5 ppm), wide detection range (0.5-1000 ppm), good repeatability, and superior selectivity against other gases. In situ Kelvin potential force microscopy results revealed that the TiO <subscript>2</subscript> modification not only improved the surface reactivity of the sensing layers but also contributed to the NH <subscript>3</subscript> sensing performance by serving as the "gas-gating" layers that modulated the electron depletion layer and the conductivity of the MoS <subscript>2</subscript> films. Such an n - n hetero-compositing strategy can provide a simple and cost-effective approach for developing high-performance NH <subscript>3</subscript> sensors based on 2D semiconductors.

Details

Language :
English
ISSN :
2040-3372
Volume :
15
Issue :
35
Database :
MEDLINE
Journal :
Nanoscale
Publication Type :
Academic Journal
Accession number :
37609839
Full Text :
https://doi.org/10.1039/d3nr02469e