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25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate.
- Source :
-
Optics letters [Opt Lett] 2024 Feb 01; Vol. 49 (3), pp. 586-589. - Publication Year :
- 2024
-
Abstract
- In this Letter, we present a comprehensive analysis of the high-speed performance of 940 nm oxide-confined AlGaAs vertical-cavity surface-emitting lasers (VCSELs) grown on Ge substrates. Our demonstration reveals a pronounced superiority of Ge-based VCSELs in terms of thermal stability. The presented Ge-VCSEL has a maximum modulation bandwidth of 16.1 GHz and successfully realizes a 25 Gb/s NRZ transmission at 85 <superscript>∘</superscript> C. The experimental results underscore the significance and potential of Ge-VCSELs for applications requiring robust performance in high-temperature environments, laying the cornerstone for the future development of VCSEL devices.
Details
- Language :
- English
- ISSN :
- 1539-4794
- Volume :
- 49
- Issue :
- 3
- Database :
- MEDLINE
- Journal :
- Optics letters
- Publication Type :
- Academic Journal
- Accession number :
- 38300065
- Full Text :
- https://doi.org/10.1364/OL.509988