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Monolithically integrated 940 nm VCSELs on bulk Ge substrates.
- Source :
-
Optics express [Opt Express] 2024 Feb 12; Vol. 32 (4), pp. 6609-6618. - Publication Year :
- 2024
-
Abstract
- This research successfully developed an independent Ge-based VCSEL epitaxy and fabrication technology route, which set the stage for integrating AlGaAs-based semiconductor devices on bulk Ge substrates. This is the second successful Ge-based VCSEL technology reported worldwide and the first Ge-based VCSEL technology with key details disclosed, including Ge substrate specification, transition layer structure and composition, and fabrication process. Compared with the GaAs counterparts, after epitaxy optimization, the Ge-based VCSEL wafer has a 40% lower surface root-mean-square roughness and 72% lower average bow-warp. After device fabrication, the Ge-based VCSEL has a 10% lower threshold current density and 19% higher maximum optical differential efficiency than the GaAs-based VCSEL.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 32
- Issue :
- 4
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 38439360
- Full Text :
- https://doi.org/10.1364/OE.513997