Cite
Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO 2 /RuO 2 Memristor.
MLA
Shin, Dong Hoon, et al. “Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO 2 /RuO 2 Memristor.” ACS Applied Materials & Interfaces, vol. 16, no. 13, Apr. 2024, pp. 16462–73. EBSCOhost, https://doi.org/10.1021/acsami.3c19523.
APA
Shin, D. H., Park, H., Ghenzi, N., Kim, Y. R., Cheong, S., Shim, S. K., Yim, S., Park, T. W., Song, H., Lee, J. K., Kim, B. S., Park, T., & Hwang, C. S. (2024). Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO 2 /RuO 2 Memristor. ACS Applied Materials & Interfaces, 16(13), 16462–16473. https://doi.org/10.1021/acsami.3c19523
Chicago
Shin, Dong Hoon, Hyungjun Park, Néstor Ghenzi, Yeong Rok Kim, Sunwoo Cheong, Sung Keun Shim, Seongpil Yim, et al. 2024. “Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO 2 /RuO 2 Memristor.” ACS Applied Materials & Interfaces 16 (13): 16462–73. doi:10.1021/acsami.3c19523.