Cite
Assessment of wafer scale MoS 2 atomic layers grown by metal-organic chemical vapor deposition using organo-metal, organo-sulfide, and H 2 S precursors.
MLA
Curtis, Michael, et al. “Assessment of Wafer Scale MoS 2 Atomic Layers Grown by Metal-Organic Chemical Vapor Deposition Using Organo-Metal, Organo-Sulfide, and H 2 S Precursors.” RSC Advances, vol. 14, no. 31, July 2024, pp. 22618–26. EBSCOhost, https://doi.org/10.1039/d4ra04279d.
APA
Curtis, M., Maryon, O., McKibben, N., Eixenberger, J., Chen, C., Chinnathambi, K., Pasko, S., El Kazzi, S., Redwing, J. M., & Estrada, D. (2024). Assessment of wafer scale MoS 2 atomic layers grown by metal-organic chemical vapor deposition using organo-metal, organo-sulfide, and H 2 S precursors. RSC Advances, 14(31), 22618–22626. https://doi.org/10.1039/d4ra04279d
Chicago
Curtis, Michael, Olivia Maryon, Nicholas McKibben, Josh Eixenberger, Chen Chen, Karthik Chinnathambi, Sergej Pasko, Salim El Kazzi, Joan M Redwing, and David Estrada. 2024. “Assessment of Wafer Scale MoS 2 Atomic Layers Grown by Metal-Organic Chemical Vapor Deposition Using Organo-Metal, Organo-Sulfide, and H 2 S Precursors.” RSC Advances 14 (31): 22618–26. doi:10.1039/d4ra04279d.